Nishizawa, Jun-ichi : rechercher sur Z-Library

IEEE Photonics Technology Letters

Année:

1990

Langue:

english

Fichier:

PDF, 319 KB

english, 1990

80-ps and 4-ns pulse-pumped gains in a GaP-AlGaP semiconductor Raman amplifier

S. Saito, K. Suto, T. Kimura, Jun-Ichi Nishizawa

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 173 KB

english, 2004

Production-based emissions, consumption-based emissions and consumption-based health impacts of PM2.5 carbonaceous aerosols in Asia

Takahashi, Kei, Nansai, Keisuke, Tohno, Susumu, Nishizawa, Masato, Kurokawa, Jun-ichi, Ohara, Toshimasa

Journal:

Atmospheric Environment

Année:

2014

Langue:

english

Fichier:

PDF, 1.99 MB

english, 2014

Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy

Nugraha, Osamu Itoh, Ken Suto, Jun-ichi Nishizawa

Journal:

Jun-ichi Nishizawa, Hiroshi Sakuraba, Yutaka Oyama

Année:

1996

Langue:

english

Fichier:

PDF, 476 KB

english, 1996

Photoassisted deposition process

Jun-Ichi Nishizawa

Journal:

Thin Solid Films

Année:

1988

Langue:

english

Fichier:

PDF, 524 KB

english, 1988

Molecular layer epitaxy of GaAs

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 510 KB

english, 1993

Surface reaction mechanism in MOCVD

Jun-ichi Nishizawa, Hiroshi Sakuraba, Toru Kurabayashi

Journal:

Jun-ichi Nishizawa, Toru Kurabayashi, Kyozo Kanamoto, Takashi Yoshida, Toru Oizumi

Année:

1996

Langue:

english

Fichier:

PDF, 682 KB

english, 1996

Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 232 KB

english, 2003

Stoichiometry control and point defects in compound semiconductors

Materials Chemistry and Physics

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2000

[IEEE 4th European Microwave Conference, 1974 - Montreux, Switzerland (1974.10.4-1974.10.6)] 4th European Microwave Conference, 1974 - Millimeter Wave Oscillations from Tunnett Diodes

Nishizawa, Jun-ichi, Ohmi, Tadahiro, Sakai, Toshi-aki

Année:

1974

Langue:

english

Fichier:

PDF, 5.08 MB

english, 1974

Photoluminescence and Photocapacitance of Se Vapor-Pressure-Dependent Deep Levels in Ga-Diffused Layers Formed in p-Type ZnSe Substrates

Sakurai, Fumitoshi, Suto, Ken, Sanda, Seishi, Nishizawa, Jun-ichi

Journal:

Journal of The Electrochemical Society

Année:

2002

Langue:

english

Fichier:

PDF, 63 KB

english, 2002

Frequency Variations of π-equivalent Circuit Parameters of a Junction Transistor †

ABE, ATSUSHI, NISHIZAWA, JUN-ICHI

Journal:

International Journal of Electronics

Année:

1966

Langue:

english

Fichier:

PDF, 742 KB

english, 1966

Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum

Otsuka, Nobuyuki, Oyama, Yutaka, Kikuchi, Hideyuki, Nishizawa, Jun-ichi, Suto, Ken

Journal:

Japanese Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 483 KB

english, 1998

Photocapacitance (PHCAP) Investigation of Proton Irradiated Si-PIN Diodes

Nishizawa, Jun-ichi

Journal:

Journal of The Electrochemical Society

Année:

1991

Langue:

english

Fichier:

PDF, 461 KB

english, 1991

Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

Yasuda, Arata, Suto, Ken, Takahashi, Yatsuhiro, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Année:

2014

Langue:

english

Fichier:

PDF, 448 KB

english, 2014

Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy

Yasuda, Arata, Sasaki, Tetsuo, Suto, Ken, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Année:

2015

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2015

A comparative study of THz spectra

NISHIZAWA, Jun-ichi, SUTO, Ken, SASAKI, Tetsuo, TANNO, Takenori

Journal:

Proceedings of the Japan Academy Series B Physical and Biological Sciences

Année:

2005

Langue:

english

Fichier:

PDF, 795 KB

english, 2005

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Reduction of input current harmonics based on space vector modulation for three-phase VSI with varied power factor

Nishizawa, Koroku, Nagaoka, Jun-ichi Itoh, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Année:

2016

Langue:

english

Fichier:

PDF, 418 KB

english, 2016

[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Quick compensation method of motor phase current sensor offsets without motor parameters for PMSM drive

Nishizawa, Koroku, Itoh, Jun-ichi, Nishizawa, Yoshinobu

Année:

2017

Langue:

english

Fichier:

PDF, 490 KB

english, 2017

[IEEE 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw (2017.9.11-2017.9.14)] 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Reduction of DC-link current harmonics for three-phase VSI over wide power factor range using single-carrier-comparison discontinuous PWM

Nishizawa, Koroku, Itoh, Jun-ichi, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Année:

2017

Langue:

english

Fichier:

PDF, 933 KB

english, 2017

[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Reduction of DC-Link Current Harmonics Over Wide Power-Factor Range for Three-Phase VSI Using Single-Carrier-Comparison Continuous PWM

Nishizawa, Koroku, Itoh, Jun-Ichi, Fujita, Satoru, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Année:

2018

Langue:

english

Fichier:

PDF, 955 KB

english, 2018

Monomolecular layer epitaxy of GaAs for ideal static induction transistor

Jun-ichi Nishizawa, Toru Kurabayashi

Journal:

Advanced Functional Materials

Année:

1997

Langue:

english

Fichier:

PDF, 276 KB

english, 1997

ChemInform Abstract: Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH3)3Al/ (CH3)3Ga/AsH3.

Yutaka Oyama, Hiroshi Watanabe, Fumio Matsumoto, Jun-ichi Nishizawa, Ken Suto

Journal:

ChemInform

Année:

2000

Fichier:

PDF, 30 KB

2000

ChemInform Abstract: Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH3)3Ga/AsH3.

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun-ichi Nishizawa

Journal:

ChemInform

Année:

2002

Langue:

english

Fichier:

PDF, 32 KB

english, 2002

Quantitative evaluation of mefenamic acid polymorphs by terahertz–chemometrics

Makoto Otsuka, Jun-ichi Nishizawa, Jiro Shibata, Masahiko Ito

Journal:

Journal of Pharmaceutical Sciences

Année:

2010

Langue:

english

Fichier:

PDF, 278 KB

english, 2010

Layer growth in silicon epitaxy

Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo

Journal:

Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo

Année:

1972

Langue:

english

Fichier:

PDF, 854 KB

english, 1972

Silicon epitaxial growth

Journal:

Yutaka Nonomura, Yasuo Okuno, Jun-ichi Nishizawa

Année:

1972

Langue:

english

Fichier:

PDF, 1.39 MB

english, 1972

Surface morphology of GaAs grown by vapor phase epitaxy

Journal:

Année:

1979

Langue:

english

Fichier:

PDF, 1.14 MB

english, 1979

Silicon vapor phase epitaxy

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 840 KB

english, 1982

Stoichiometry control for growth of III–V crystals

Nishizawa, Jun-ichi

Journal:

Nishizawa, Jun-ichi, Aoki, Kenji, Suzuki, Sohbe, Kikuchi, Kazuhiko

Année:

1990

Langue:

english

Fichier:

PDF, 584 KB

english, 1990

Molecular layer epitaxy of silicon

Journal:

Année:

1990

Langue:

english

Fichier:

PDF, 242 KB

english, 1990

Molecular layer epitaxy and its fundaments

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 581 KB

english, 1991

Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

Nugraha, Ken Suto, Osamu Itoh, Jun-ichi Nishizawa, Yasutoshi Yokota

Journal:

Jun-ichi Nishizawa, Ohmi Tadahiro, Takashige Tamamushi

Année:

1996

Langue:

english

Fichier:

PDF, 423 KB

english, 1996

4408304 Semiconductor memory

Journal:

Microelectronics Reliability

Année:

1984

Langue:

english

Fichier:

PDF, 88 KB

english, 1984

Heat treatment of gallium phosphide

Jun-ichi Nishizawa, Yasuo Okuno, Ken Suto, Toshio Sato, Shigenobu Yamokoshi

Journal:

Solid State Communications

Année:

1974

Langue:

english

Fichier:

PDF, 201 KB

english, 1974

Transit-time effects in semiconductors

Kotaro Okamoto, Jun-Ichi Nishizawa

Journal:

Solid-State Electronics

Année:

1966

Langue:

english

Fichier:

PDF, 511 KB

english, 1966

Potential, field and carrier distribution in the channel of junction field-effect transistors

Hiroyuki Tango, Jun-Ichi Nishizawa

Journal:

Solid-State Electronics

Année:

1970

Langue:

english

Fichier:

PDF, 1.50 MB

english, 1970

Mass spectrometric analysis of gas molecule adsorption on solid

Jun-Ichi Nishizawa, Toru Kurabayashi, Yasukazu Iwasaki

Journal:

Colloids and Surfaces

Année:

1989

Langue:

english

Fichier:

PDF, 393 KB

english, 1989

Surface reaction mechanism in Si and GaAs crystal growth

Jun-ichi Nishizawa, Hiroshi Sakuraba

Journal:

Surface Science Reports

Année:

1992

Langue:

english

Fichier:

PDF, 4.86 MB

english, 1992

Preface

Journal:

Yutaka Oyama, Piotr Plotka, Jun-ichi Nishizawa

Année:

1994

Langue:

english

Fichier:

PDF, 134 KB

english, 1994

Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Journal:

Année:

1994

Langue:

english

Fichier:

PDF, 460 KB

english, 1994

Molecular layer epitaxy of GaAs

Journal:

Piotr Płotka, Toru Kurabayashi, Yutaka Oyama, Jun-ichi Nishizawa

Année:

1994

Langue:

english

Fichier:

PDF, 521 KB

english, 1994

Ideal static induction transistor implemented with molecular layer epitaxy

Journal:

Année:

1994

Langue:

english

Fichier:

PDF, 529 KB

english, 1994

Molecular layer epitaxy

Journal:

Kohji Takashima, Kazuyuki Minami, Masayoshi Esashi, Jun-ichi Nishizawa

Année:

1994

Langue:

english

Fichier:

PDF, 816 KB

english, 1994

Laser projection CVD using the low temperature condensation method

Journal:

Takeo Ohno, Yutaka Oyama, Jun-ichi Nishizawa

Année:

1994

Langue:

english

Fichier:

PDF, 506 KB

english, 1994

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 125 KB

english, 2006

Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 183 KB

english, 2003

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 331 KB

english, 2003

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 181 KB

english, 2003

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal: